The discovery reported only online in Advanced Materials, Professional Magazine describes the creation first of a high-performance diode "metal-aislante - metal".
"Scientists have been trying to do this for decades, until now without success", said Douglas Keszler, a distinguished professor of chemistry at OSU and one of the leaders of the nation materials science researchers. "Diodes made previously with other approaches always had poor throughput and performance."
"This is a fundamental change in the way that could produce electronic products, at high speed on a large scale at very low cost, even lower than with conventional methods", said Keszler. "Is a basic way to eliminate the current limitations of the speed of electrons which they move through materials."
It has applied for a patent on new technology, say the University officials. New businesses, industries and jobs of high technology, ultimately, can leave this progress, say.
The research was carried out in the middle of green materials chemistry and has been endorsed by the National Science Foundation, the army and the Institute for micro research laboratory and the Oregon Nanoscience.
Electronic conventional made with the work of transistors that help control the flow of electrons silicon-based materials. Although fast and relatively inexpensive, this approach is still limited by the speed with which they can move electrons on these materials. And with the arrival of computers increasingly faster and more sophisticated products such as liquid crystal, current technologies screens are almost to the limit of what can be done, say experts.
On the contrary, a metal-aislante - metal or a diode MIM can use to perform some of the same functions, but a fundamentally different way. In this system, the device is like a sandwich, with insulator in half and two layers of metal above and below. To function, the electron does not move both on materials like "tunnels" on the insulation of the almost instantly listed on the other side.
"Where" first began to develop more sophisticated materials for the display industry, knew that this type of MIM diode was what they needed, but could not make it work, said Keszler. "Now we can, and probably could be used with a range of metals that are cheap and readily available, such as copper, nickel or aluminium". "It is also much simpler, less costly and easier to manufacture".
The conclusions were made by scientists in the Department of chemistry at OSU; School of electrical engineering and computer science; and the school of mechanical, industrial and manufacturing engineering.
In the newly published study, the OSU researchers and engineers describe the use of "contact amorphous metal" as a technology that solves the problems that plagued earlier MIM diode. OSU diodes made at temperatures relatively low with techniques that are suitable for manufacturing of devices in a variety of substrates in large areas.
OSU scientists have been leaders in many important advances in recent years materials science, including transparent electronics field. The researchers of the University will make an initial work with the new technology in electronic screens, but a number of applications is possible, they say.
Equipment for high-speed and electronics not dependent on transistors is possibilities. Also on the horizon are "Energy harvesting" technologies such as the nocturnal capture solar energy of re-radiated a way of producing energy from the Earth as it cools overnight.
"For a long time, everyone wanted something which takes us beyond Silicon," Keszler said. "This could be a way to simply print electronic an even less costly large scale we can now." And when products are beginning to emerge the increase in the speed of operation could be enormous.
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